May 2003

2002 Fairchild Semiconductor Corporation

FDS6064N3 Rev B2 (W)

FDS6064N3

General Description

This

N-Channel

MOSFET

has

been

designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

Applications

• Synchronous rectifier

• DC/DC converter

• FLMP SO-8 package: Enhanced thermal

performance in industry-standard package size

4

5

3

6

2

7

1

8

Bottom-side

Drain Contact

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

20

V

Gate-Source Voltage

± 8

Drain Current – Continuous

(Note 1a)

23

A

– Pulsed

60

Power Dissipation

(Note 1a)

3.0

W

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

40

°C/W

Thermal Resistance, Junction-to-Case

0.5

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6064N3

FDS6064N3

13’’

12mm

2500 units