FDS6609A datasheet(1/8 Pages) FAIRCHILD

부품명	FDS6609A

상세설명	P-Channel Logic Level PowerTrench MOSFET

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제조업체	FAIRCHILD [Fairchild Semiconductor]

홈페이지	http://www.fairchildsemi.com

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April 2000

PRELIMINARY

FDS6609A Rev B(W)

FDS6609A

P-Channel Logic Level PowerTrench®

® MOSFET

General Description

This P-Channel Logic Level MOSFET is produced

using

Fairchild

Semiconductor's

advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain

superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Applications

• DC/DC converter

• Load switch

• Motor Drive

Features

• –6.3 A, –30 V . RDS(ON) = 0.032 Ω @V

GS = -10 V

RDS(ON) = 0.05

Ω @V

GS = -4.5 V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability

S

D

S

SO-8

D

G

4

3

2

1

5

6

7

8

Absolute Maximum Ratings

TA=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

–30

V

VGSS

Gate-Source Voltage

±20

V

ID

Drain Current

– Continuous

(Note 1a)

-6.3

A

– Pulsed

-40

Power Dissipation for Single Operation

(Note 1a)

2.5

(Note 1b)

1.2

PD

(Note 1c)

1.0

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

25

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6609A

13’’

12mm

2500 units

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Fairchild Semiconductor	FDS6612A	246Kb / 8P	Single N-Channel, Logic Level, PowerTrenchTM MOSFET
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FDS6609A 데이터시트(PDF) 1 Page - Fairchild Semiconductor

FDS6609A 데이터시트(HTML) 1 Page - Fairchild Semiconductor

유사한 부품 번호 - FDS6609A

유사한 설명 - FDS6609A

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