FDS6680 Rev.E1

0

10

20

30

40

0

2

4

6

8

10

Q

, GATE CHARGE (nC)

g

I

= 11.5A

D

V

= 10V

DS

15V

20V

0.1

0.2

0.5

1

2

5

10

30

50

0.01

0.1

1

3

10

20

50

100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

1s

100ms

10s

10ms

RDS(ON)

LIMIT

1ms

100us

DC

V

= 10V

SINGLE PULSE

R

= See Note 1c

T

= 25°C

GS

A

θJA

0.001

0.01

0.1

1

10

100

300

0

10

20

30

40

50

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

=See Note 1c

T = 25°C

θJA

A

Figure 10. Single Pulse Maximum Power

Dissipation.

0.1

0.2

0.5

1

2

5

10

20

30

100

200

500

1000

2000

3000

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Ciss

f = 1 MHz

V

= 0V

GS

Coss

Crss

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical And Thermal Characteristics

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

1

2

R

(t) = r(t) * R

R

=See Note 1c

θJA

θJA

θJA

T - T

= P * R

(t)

A

J

P(pk)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.