February 2000

PRELIMINARY

2000 Fairchild Semiconductor Corporation

FDS6680S Rev B (W)

FDS6680S

30V N-Channel PowerTrench

General Description

The FDS6680S is designed to replace a single SO-8

MOSFET and Schottky diode in synchronous DC:DC

power supplies.

This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

an

integrated

Schottky

diode

using

Fairchild’s

monolithic SyncFET technology.

The performance of

the FDS6680S as the low-side switch in a synchronous

rectifier is indistinguishable from the performance of the

FDS6680 in parallel with a Schottky diode.

Applications

• DC/DC converter

• Motor drives

Features

• 11.5 A, 30 V.

Ω @ V

Ω @ V

• Includes SyncFET Schottky body diode

• Low gate charge (17nC typical)

• High performance trench technology for extremely low

• High power and current handling capability

S

D

S

S

SO-8

D

D

D

G

4

3

2

1

5

6

7

8

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Drain Current

– Continuous

(Note 1a)

11.5

A

– Pulsed

50

Power Dissipation for Single Operation

(Note 1a)

2.5

(Note 1b)

1.2

(Note 1c)

1

W

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

25

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6680S

FDS6680S

13’’

12mm

2500 units