May 1998

FDS8936A

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

Absolute Maximum Ratings

T

Symbol

Parameter

FDS8936A

Units

V

DSS

Drain-Source Voltage

30

V

V

GSS

Gate-Source Voltage

±20

V

I

D

Drain Current - Continuous

(Note 1a)

6

A

- Pulsed

20

P

D

Power Dissipation for Dual Operation

2

W

Power Dissipation for Single Operation

(Note 1a)

1.6

(Note 1b)

1

(Note 1c)

0.9

T

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

78

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

40

°C/W

FDS8936A Rev.B

6 A, 30 V. R

R

High density cell design for extremely low R

High power and current handling capability in a widely

used surface mount package.

Dual MOSFET in surface mount package.

SOT-23

SuperSOT

SOIC-16

SO-8

SOT-223

SuperSOT

SO-8 N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

notebook computer power management

and other battery

powered circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

1

5

7

8

2

3

4

6

S1

D1

S2

G1

SO-8

D2

D2

D1

G2

FDS

8936A

pin 1

© 1998 Fairchild Semiconductor Corporation