November 1999

ADVANCE INFORMATION

1999 Fairchild Semiconductor Corporation

FDZ2552P Rev. A (w)

FDZ2552P

Dual P-Channel 2.5V Specified PowerTrench

General Description

Combining

Fairchild’s

advanced

2.5V

specified

PowerTrench process with state of the art BGA

packaging, the FDZ2552P minimizes both PCB space

This dual BGA MOSFET embodies a

breakthrough in packaging technology which enables

the device to combine excellent thermal transfer

characteristics, high current handling capability, ultra-

Applications

•= Battery management

•= Load switch

•= Battery protection

Features

Ω @ V

1/3 the area of SO-8.

•= Ultra-thin package: less than 0.70 mm height when

mounted to PCB.

•= Outstanding thermal transfer characteristics:

significantly better than SO-8.

•= High power and current handling capability.

Q2

Q1

Pin 1

G

S

D

D

S

S

S

D

S

S

S

S

G

S

S

D

D

D

Bottom

Pin 1

Top

S

S

G

G

D

Q1

Q2

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

–20

V

Gate-Source Voltage

±12

V

Drain Current

– Continuous

(Note 1a)

–6

A

– Pulsed

-20

Power Dissipation (Steady State)

(Note 1a)

3.0

W

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

8

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

F2552

FDZ2552P

TBD

TBD

TBD