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UC1611J 데이터시트(PDF) 1 Page - Texas Instruments |
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UC1611J 데이터시트(HTML) 1 Page - Texas Instruments |
1 / 7 page UC1611 UC3611 SLUS338A – JUNE 1993 – REVISED MAY 2001 QUAD SCHOTTKY DIODE ARRAY 1 www.ti.com FEATURES D Matched, Four-Diode Monolithic Array D High Peak Current D Low-Cost MINIDIP Package D Low-Forward Voltage D Parallelable for Lower VF or Higher IF D Fast Recovery Time D Military Temperature Range Available DESCRIPTION This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on the outputs of high-speed power MOSFET drivers where Schottky diodes are needed to clamp any negative excursions caused by ringing on the driven line.These diodes are also ideally suited for use as voltage clamps when driving inductive loads such as relays and solenoids, and to provide a path for current free-wheeling in motor drive applications.The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time.This single monolithic chip is fabricated in both hermetic CERDIP and copper-eaded plastic packages. The UC1611 in ceramic is designed for –55 °C to 125 °C environments but with reduced peak current capability: while the UC3611 in plastic has higher current rating over a 0 °C to 70°C ambient temperature range. AVAILABLE OPTIONS TT Packaged Devices TA = TJ SOIC Wide (DW) DIL (J) DIL (N) –55 °C to 125°C UC1611DW UC1611J UC1611N 0 °C to 70°C UC3611DW UC3611J UC3611N PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright 2001, Texas Instruments Incorporated |
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