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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SJ380F 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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2SJ380F 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
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4 / 6 page  2SJ380 2009-09-29 4 Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth – Tc −4 0 −80 160 80 −40 40 −1 −3 0 120 Common source VDS = −10 V ID = −1 mA Pulse test −2 Case temperature Tc (°C) PD – Tc Total gate charge Qg (nC) Dynamic Input/Output Characteristics 0 0 40 80 120 160 10 20 30 40 0 0 −40 −100 100 40 −20 −60 −80 20 60 80 VDS VGS −20 V VDD = −80 V −40 V 0 −8 −20 −4 −12 −16 Common source ID = −12 A Tc = 25°C Pulse test −8 0 −80 160 40 −40 80 120 Common source Pulse test ID = −8 A −2, −4 −2 −4 VGS = −4 V VGS = −10 V 0 0.1 0.2 0.3 0.4 0.5 −0.3 01.0 0.8 0.2 Common source Tc = 25°C Pulse test 0, 1 −1 VGS = −10 V 0.6 −1 −3 −10 −30 0.4 −2 −3 −5 −0.5 −5 30 −0.1 −100 −10 −0.3 Crss −3 100 300 3000 −1 Coss Ciss −30 Common source VGS = 0 V f = 1 MHz Tc = 25°C 1000 5000 50 500 |
유사한 부품 번호 - 2SJ380F |
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유사한 설명 - 2SJ380F |
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