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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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LM3151 데이터시트(PDF) 4 Page - Texas Instruments |
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LM3151 데이터시트(HTML) 4 Page - Texas Instruments |
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4 / 26 page  LM3151, LM3152, LM3153 SNVS562G – SEPTEMBER 2008 – REVISED MARCH 2011 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) (2) VIN to GND -0.3V to 47V SW to GND -3V to 47V BST to SW -0.3V to 7V BST to GND -0.3V to 52V All Other Inputs to GND -0.3V to 7V ESD Rating (3) 2kV Storage Temperature Range -65°C to +150°C (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but does not ensure specific performance limits. For ensured specifications and conditions, see the Electrical Characteristics. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. (3) The human body model is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin. Test Method is per JESD-22-A114. OPERATING RATINGS (1) VIN 6V to 42V Junction Temperature Range (TJ) −40°C to + 125°C EN 0V to 5V (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but does not ensure specific performance limits. For ensured specifications and conditions, see the Electrical Characteristics. ELECTRICAL CHARACTERISTICS Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated the following conditions apply: VIN = 18V. Symbol Parameter Conditions Min Typ Max Units Start-Up Regulator, VCC VCC CVCC = 1 µF, 0 mA to 40 mA 5.65 5.95 6.25 V IVCC = 2 mA, Vin = 5.5V 40 VIN - VCC VIN - VCC Dropout Voltage mV IVCC = 30 mA, Vin = 5.5V 330 IVCCL VCC Current Limit (1) VCC = 0V 65 100 mA VCC Under-voltage Lockout threshold 4.75 5.1 5.40 VCCUVLO VCC Increasing V (UVLO) VCC-UVLO-HYS VCC UVLO Hysteresis VCC Decreasing 475 mV tCC-UVLO-D VCC UVLO Filter Delay 3 µs IIN Input Operating Current No Switching 3.6 5.2 mA IIN-SD Input Operating Current, Device Shutdown VEN = 0V 32 55 µA GATE Drive IQ-BST Boost Pin Leakage VBST – VSW = 6V 2 nA RDS-HG-Pull-Up HG Drive Pull–Up On-Resistance IHG Source = 200 mA 5 Ω RDS-HG-Pull-Down HG Drive Pull–Down On-Resistance IHG Sink = 200 mA 3.4 Ω RDS-LG-Pull-Up LG Drive Pull–Up On-Resistance ILG Source = 200 mA 3.4 Ω RDS-LG-Pull-Down LG Drive Pull–Down On-Resistance ILG Sink = 200 mA 2 Ω (1) VCC provides self bias for the internal gate drive and control circuits. Device thermal limitations limit external loading. 4 Submit Documentation Feedback Copyright © 2008–2011, Texas Instruments Incorporated Product Folder Links: LM3151 LM3152 LM3153 |
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