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STB18N65M5 데이터시트(PDF) 8 Page - STMicroelectronics |
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8 / 18 page Electrical characteristics STB18N65M5, STD18N65M5 8/18 Doc ID 023446 Rev 1 Figure 14. Drain-source diode forward characteristics Figure 15. Normalized BVDSS vs temperature Figure 16. Switching losses vs gate resistance (1) 1. Eon including reverse recovery of a SiC diode VSD 0 20 ISD(A) (V) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ=-50°C TJ=150°C TJ=25°C AM05461v1 VDS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 ID = 1mA 1.08 AM10399v1 E 0 0 20 RG( Ω) ( μJ) 10 30 20 40 40 ID=9.5A VDD=400V Eon Eoff 60 VGS=10V 80 100 120 140 160 AM12485v1 |
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