SI2316BDS-T1-GE3 datasheet(1/9 Pages) VISHAY

부품명	SI2316BDS-T1-GE3

상세설명	N-Channel 30-V (D-S) MOSFET

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Vishay Siliconix

Si2316BDS

Document Number: 70445

S09-1503-Rev. B, 10-Aug-09

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1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

PWM Optimized

•

100 % Rg tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Battery Switch

•

DC/DC Converter

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 moard.

c. t = 5 s.

d. Maximum under Steady State conditions is 130 °C/W.

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ)

30

0.050 at VGS = 10 V

4.5

3.16 nC

0.080 at VGS = 4.5 V

3.4

Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free)

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Si2316DS (M6)*

*Marking Code

Si2316BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

4.5

A

TC = 70 °C

3.6

TA = 25 °C

3.9b, c

TA = 70 °C

3.13b, c

Pulsed Drain Current

IDM

20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.39

TA = 25 °C

1.04b, c

Maximum Power Dissipation

TC = 25 °C

PD

1.66

W

TC = 70 °C

1.06

TA = 25 °C

1.25b, c

TA = 70 °C

0.8b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

≤ 5 s

RthJA

80

100

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

60

75

유사한 부품 번호 - SI2316BDS-T1-GE3

제조업체	부품명	데이터시트	상세설명
VBsemi Electronics Co.,...	SI2316BDS-T1-GE3	488Kb / 9P	N-Channel 30-V (D-S) MOSFET

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SI2316BDS-T1-GE3 데이터시트(PDF) 1 Page - Vishay Siliconix

SI2316BDS-T1-GE3 데이터시트(HTML) 1 Page - Vishay Siliconix

유사한 부품 번호 - SI2316BDS-T1-GE3

유사한 설명 - SI2316BDS-T1-GE3

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