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SI2305DS 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI2305DS 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com 4 Document Number: 70833 S09-0133-Rev. E, 02-Feb-09 Vishay Siliconix Si2305DS TYPICAL CHARACTERISTICS 25 °C, unless otherwse noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70833. Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 0.1 10 30 0 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) 1 - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0 0.1 0.2 0.3 0.4 0.5 024 68 ID = 3.5 A VGS - Gate-to-Source Voltage (V) 0.01 0 1 6 12 2 4 10 500 0.1 Time (s) 8 10 100 TA = 25 °C Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) 2 1 0.1 0.01 10- 3 10- 2 1 10 500 10- 1 10- 4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - T A = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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