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SM30T35AY 데이터시트(PDF) 4 Page - STMicroelectronics |
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SM30T35AY 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 13 page Characteristics SM30TY 4/13 Doc ID 022065 Rev 2 Figure 3. Peak pulse power dissipation versus initial junction temperature (typical value) Figure 4. Peak pulse power versus exponential pulse duration (Tj initial = 25 °C) P (W) PP 0 500 1000 1500 2000 2500 3000 3500 0 25 50 75 100 125 150 175 T (°C) j 10/1000 µs P (kW) PP 0.1 1.0 10.0 100.0 1000.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 T initial = 25 °C j t( ) P ms Figure 5. Clamping voltage versus peak pulse current (exponential waveform, maximum values) Figure 6. Junction capacitance versus reverse applied voltage for unidirectional types (typical values) I (A) PP 0.1 1.0 10.0 100.0 1000.0 10 100 10/1000 µs 8/20 µs V (V) CL T initial = 25 °C j C(nF) 0.1 1.0 10.0 1 10 100 SM30T18AY SM30T39AY F = 1 MHz V = 30 mV T = 25 °C OSC RMS j V (V) R Figure 7. Junction capacitance versus reverse applied voltage for bidirectional types (typical values) Figure 8. Leakage current versus junction temperature (typical values) 0.1 1.0 10.0 1 10 100 C(nF) SM30T18CAY SM30T39CAY F = 1 MHz V = 30 mV T = 25 °C OSC RMS j V (V) R 1.E+00 1.E+01 1.E+02 1.E+03 25 50 75 100 125 150 V= V RRM I (nA) R T (°C) j |
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