Max.

N-Channel

P-Channel

Drain-to-Source Voltage

20

-20

2.7

-2.2

2.2

-1.7

Pulsed Drain Current



11

-9.0

Power Dissipation

ƒ

0.96

W

Power Dissipation

ƒ

0.62

Linear Derating Factor

7.7

mW/°C

Gate-to-Source Voltage

± 12

V

Junction and Storage Temperature Range

°C

N-Ch

P-Ch

20V

-20V

04/20/10

IRF5851PbF

Description

Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

ƒ

–––

130

°C/W

Thermal Resistance

www.irf.com

1

These N and P channel MOSFETs from International Rectifier utilize advanced

processing techniques to achieve the extremely low on-resistance per silicon

area. This benefit provides the designer with an extremely efficient device for

use in battery and load management applications.

This Dual TSOP-6 package is ideal for applications where printed circuit

board space is at a premium and where maximum functionality is required.

With two die per package, the IRF5851 can provide the functionality of two

SOT-23 packages in a smaller footprint. Its unique thermal design and

Parameter

Units

A

Absolute Maximum Ratings

-55 to + 150

TSOP-6







*

*

6

6







'

'

PD-95341A