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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRLML5103TRPBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRLML5103TRPBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLML5103PbF www.irf.com 2 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -250µA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient -0.029 V/°C Reference to 25°C, ID = -1mA 0.60 VGS = -10V, ID = -0.60A 1.0 VGS = -4.5V, ID = -0.30A VGS(th) Gate Threshold Voltage -1.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 0.44 S VDS = -10V, ID = -0.30A -1.0 VDS = -24V, VGS = 0V -25 VDS = -24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage -100 VGS = -20V Gate-to-Source Reverse Leakage 100 VGS = 20V Qg Total Gate Charge 3.4 5.1 ID = -0.60A Qgs Gate-to-Source Charge 0.52 0.78 nC VDS = -24V Qgd Gate-to-Drain ("Miller") Charge 1.1 1.7 VGS = -10V, See Fig. 6 and 9 td(on) Turn-On Delay Time 10 VDD = -15V tr Rise Time 8.2 ID = -0.60A td(off) Turn-Off Delay Time 23 RG = 6.2Ω tf Fall Time 16 RD = 25Ω, See Fig. 10 Ciss Input Capacitance 75 VGS = 0V Coss Output Capacitance 37 pF VDS = -25V Crss Reverse Transfer Capacitance 18 = 1.0MHz, See Fig. 5 Ω µA nA ns IGSS IDSS Drain-to-Source Leakage Current RDS(ON) Static Drain-to-Source On-Resistance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage -1.2 V TJ = 25°C, IS = -0.60A, VGS = 0V trr Reverse Recovery Time 26 39 ns TJ = 25°C, IF = -0.60A Qrr Reverse RecoveryCharge 20 30 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A S D G -0.54 -4.8 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -0.60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 5sec. |
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