전자부품 데이터시트 검색엔진 |
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FQP1N60 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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FQP1N60 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page 3 24 68 10 10 -1 10 0 ¡Ø Note 1. V DS = 50V 2. 250¥ìs Pulse Test -55¡É 150¡É 25¡É V GS , Gate-Source Voltage [V] 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 V GS = 20V V GS = 10V ¡Ø Note : T J = 25¡É I D, Drain Current [A] 10 -1 10 0 10 1 10 -2 10 -1 10 0 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ¡Ø Note : 1. 250¥ìs Pulse Test 2. T C = 25¡É V DS, Drain-Source Voltage [V] Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source Voltage Fig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward Voltage Fig 3. On-Resistance vs. Drain Current 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 25¡É 150¡É ¡Ø Note : 1. V GS = 0V 2. 250¥ìs Pulse Test V SD , Source-Drain Voltage [V] 10 -1 10 0 10 1 0 50 100 150 200 C iss = Cgs + Cgd (Cds = shorted) C oss = C ds + C gd C rss = C gd ¡Ø Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 1234 5 0 2 4 6 8 10 12 V DS = 300V V DS = 120V V DS = 480V ¡Ø Note : I D = 1.2 A Q G, Total Gate Charge [nC] QFET N-CHANNEL FQP1N60 |
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