전자부품 데이터시트 검색엔진 |
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FQP2P25 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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FQP2P25 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page ©2000 Fairchild Semiconductor International Rev. A, April 2000 01234 5 6 7 0 2 4 6 8 10 12 V DS = -125V V DS = -50V V DS = -200V Note : I D = -2.3 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 100 200 300 400 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss -V DS, Drain-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -1 10 0 25 150 Notes: 1. V GS = 0V 2. 250 sPulseTest -V SD , Source-Drain Voltage [V] 0.0 1.5 3.0 4.5 6.0 0 3 6 9 12 15 Note : T J = 25 V GS = - 20V V GS = - 10V -I D , Drain Current [A] 24 68 10 10 -1 10 0 Notes: 1. V DS = -40V 2. 250 s Pulse Test -55 150 25 -V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -1 10 0 V GS Top : -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom: -5.5 V Notes : 1. 250 s Pulse Test 2. T C = 25 -V DS, Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
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