STP21N65M5 datasheet(4/22 Pages) STMICROELECTRONICS

부품명	STP21N65M5

상세설명	N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Download	22 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

Logo

4 / 22 page

Electrical characteristics

STB/F/I/P/W21N65M5

4/22

Doc ID 15427 Rev 4

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 8.5 A

0.150

0.179

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

1950

46

3

-

pF

Co(tr)

(1)

1.

Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS.

Equivalent

capacitance time

-133

-

pF

Co(er)

(2)

2.

Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Coss when VDS increases from 0 to 80% VDSS.

Equivalent

capacitance energy

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

2.5

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 8.5 A,

VGS = 10 V

(see

Figure 20)

-

50

13

23

-

nC

유사한 부품 번호 - STP21N65M5

제조업체	부품명	데이터시트	상세설명
Inchange Semiconductor ...	STP21N65M5	320Kb / 2P	isc N-Channel MOSFET Transistor

More results

유사한 설명 - STP21N65M5

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STF30N65M5	1Mb / 22P	N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247 September 2011 Rev 3
	STP32N65M5	1Mb / 22P	N-channel 650 V, 0.095 廓, 24 A, MDmesh??V Power MOSFET in D짼PAK, I짼PAK, TO-220FP, TO-220, TO-247
	STW35N65M5	1Mb / 22P	N-channel 650 V, 0.085 廓, 27 A, MDmesh??V Power MOSFET in D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247
	STB23NM50N	867Kb / 21P	N-channel 500 V, 0.162 廓, 17 A TO-220, TO-220FP, TO-247, D짼PAK MDmesh??II Power MOSFET
	STW16N65M5	1Mb / 20P	N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247
	STX23NM60ND	820Kb / 18P	N-channel 600 V, 0.150 廓, 19.5 A, FDmesh??II Power MOSFET (with fast diode) D짼PAK, I짼PAK, TO-220, TO-220FP, TO-247
	STI18NM60N	998Kb / 18P	N-channel 600 V, 0.27 廓, 13 A MDmesh??II Power MOSFET in TO-220, TO-220FP, TO-247, D짼PAK and I짼PAK
	STW57N65M5	1Mb / 22P	N-channel 650 V, 0.056 廓 typ., 42 A MDmesh??V Power MOSFET in I짼PAK, TO-220, TO-220FP and D짼PAK packages
	STF57N65M5	1Mb / 22P	N-channel 650 V, 0.056 廓 typ., 42 A MDmesh??V Power MOSFET in I짼PAK, TO-220, TO-220FP and D짼PAK packages
	STF18NM80	1Mb / 21P	N-channel 800 V, 0.25 廓, 17 A, MDmesh??Power MOSFET in D짼PAK, TO-220FP, TO-220 and TO-247 packages

More results

STP21N65M5 데이터시트(PDF) 4 Page - STMicroelectronics

STP21N65M5 데이터시트(HTML) 4 Page - STMicroelectronics

유사한 부품 번호 - STP21N65M5

유사한 설명 - STP21N65M5

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

데이터시트 다운로드

링크 URL