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FSB649 데이터시트(PDF) 1 Page - Fairchild Semiconductor

부품명 FSB649
상세설명  NPN Low Saturation Transistor
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제조업체  FAIRCHILD [Fairchild Semiconductor]
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FSB649 데이터시트(HTML) 1 Page - Fairchild Semiconductor

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FSB649
SuperSOT
TM-3
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous. Sourced from Process NC.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
°C
-55 to +150
Operating and Storage Junction Temperature Range
TJ, Tstg
A
3
Collector Current - Continuous
IC
V
5
Emitter-Base Voltage
VEBO
V
35
Collector-Base Voltage
VCBO
V
25
Collector-Emitter Voltage
VCEO
Units
FSB649
Parameter
Symbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
°C/W
250
Thermal Resistance, Junction to Ambient
RθJA
mW
500
Total Device Dissipation
PD
FSB649
Units
Max
Characteristic
Symbol
© 1999 Fairchild Semiconductor Corporation
fsb649.lwpPrNC revA
C
E
B


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