전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

SI3433CDV-T1-GE3 데이터시트(PDF) 8 Page - Vishay Siliconix

부품명 SI3433CDV-T1-GE3
상세설명  P-Channel 20-V (D-S) MOSFET
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI3433CDV-T1-GE3 데이터시트(HTML) 8 Page - Vishay Siliconix

Back Button SI3433CDV-T1-GE3 Datasheet HTML 3Page - Vishay Siliconix SI3433CDV-T1-GE3 Datasheet HTML 4Page - Vishay Siliconix SI3433CDV-T1-GE3 Datasheet HTML 5Page - Vishay Siliconix SI3433CDV-T1-GE3 Datasheet HTML 6Page - Vishay Siliconix SI3433CDV-T1-GE3 Datasheet HTML 7Page - Vishay Siliconix SI3433CDV-T1-GE3 Datasheet HTML 8Page - Vishay Siliconix SI3433CDV-T1-GE3 Datasheet HTML 9Page - Vishay Siliconix SI3433CDV-T1-GE3 Datasheet HTML 10Page - Vishay Siliconix SI3433CDV-T1-GE3 Datasheet HTML 11Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 8 / 11 page
background image
AN823
Vishay Siliconix
Document Number: 71743
27-Feb-04
www.vishay.com
1
Mounting LITTLE FOOTR TSOP-6 Power MOSFETs
Surface mounted power MOSFET packaging has been based on
integrated circuit and small signal packages. Those packages
have been modified to provide the improvements in heat transfer
required by power MOSFETs. Leadframe materials and design,
molding compounds, and die attach materials have been
changed. What has remained the same is the footprint of the
packages.
The basis of the pad design for surface mounted power MOSFET
is the basic footprint for the package. For the TSOP-6 package
outline drawing see http://www.vishay.com/doc?71200 and see
http://www.vishay.com/doc?72610 for the minimum pad footprint.
In converting the footprint to the pad set for a power MOSFET, you
must remember that not only do you want to make electrical
connection to the package, but you must made thermal connection
and provide a means to draw heat from the package, and move it
away from the package.
In the case of the TSOP-6 package, the electrical connections are
very simple. Pins 1, 2, 5, and 6 are the drain of the MOSFET and
are connected together. For a small signal device or integrated
circuit, typical connections would be made with traces that are
0.020 inches wide. Since the drain pins serve the additional
function of providing the thermal connection to the package, this
level of connection is inadequate. The total cross section of the
copper may be adequate to carry the current required for the
application, but it presents a large thermal impedance. Also, heat
spreads in a circular fashion from the heat source. In this case the
drain pins are the heat sources when looking at heat spread on the
PC board.
Figure 1 shows the copper spreading recommended footprint for
the TSOP-6 package. This pattern shows the starting point for
utilizing the board area available for the heat spreading copper. To
create this pattern, a plane of copper overlays the basic pattern on
pins 1,2,5, and 6. The copper plane connects the drain pins
electrically, but more importantly provides planar copper to draw
heat from the drain leads and start the process of spreading the
heat so it can be dissipated into the ambient air. Notice that the
planar copper is shaped like a “T” to move heat away from the
drain leads in all directions. This pattern uses all the available area
underneath the body for this purpose.
FIGURE 1.
Recommended Copper Spreading Footprint
0.049
1.25
0.010
0.25
0.014
0.35
0.074
1.875
0.122
3.1
0.026
0.65
0.167
4.25
0.049
1.25
Since surface mounted packages are small, and reflow soldering
is the most common form of soldering for surface mount
components, “thermal” connections from the planar copper to the
pads have not been used. Even if additional planar copper area is
used, there should be no problems in the soldering process. The
actual solder connections are defined by the solder mask
openings. By combining the basic footprint with the copper plane
on the drain pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low impedance
path for heat to move away from the device.
REFLOW SOLDERING
Vishay Siliconix surface-mount packages meet solder reflow
reliability requirements. Devices are subjected to solder reflow as a
test preconditioning and are then reliability-tested using
temperature cycle, bias humidity, HAST, or pressure pot. The
solder reflow temperature profile used, and the temperatures and
time duration, are shown in Figures 2 and 3.
Ramp-Up Rate
+6_C/Second Maximum
Temperature @ 155 " 15_C
120 Seconds Maximum
Temperature Above 180_C
70 − 180 Seconds
Maximum Temperature
240 +5/−0_C
Time at Maximum Temperature
20 − 40 Seconds
Ramp-Down Rate
+6_C/Second Maximum
FIGURE 2.
Solder Reflow Temperature Profile


유사한 부품 번호 - SI3433CDV-T1-GE3

제조업체부품명데이터시트상세설명
logo
Vishay Siliconix
SI3433CDV-T1-GE3 VISHAY-SI3433CDV-T1-GE3 Datasheet
255Kb / 11P
   P-Channel 20 V (D-S) MOSFET
01-Jan-2022
logo
VBsemi Electronics Co.,...
SI3433CDV-T1-GE3 VBSEMI-SI3433CDV-T1-GE3 Datasheet
450Kb / 9P
   P-Channel 30-V (D-S) MOSFET
More results

유사한 설명 - SI3433CDV-T1-GE3

제조업체부품명데이터시트상세설명
logo
Vishay Siliconix
SI9400DY VISHAY-SI9400DY Datasheet
58Kb / 4P
   P-Channel 20-V (D-S) MOSFET
Rev. K, 02-Mar-98
SI9424BDY VISHAY-SI9424BDY Datasheet
44Kb / 5P
   P-Channel 20-V (D-S) MOSFET
Rev. A, 07-Oct-02
SI8407DB VISHAY-SI8407DB Datasheet
69Kb / 6P
   P-Channel 20-V (D-S) MOSFET
Rev. B, 17-Jan-05
SI7401DN VISHAY-SI7401DN Datasheet
240Kb / 3P
   P-Channel 20-V (D-S) MOSFET
31-May-01
SI7403BDN VISHAY-SI7403BDN Datasheet
106Kb / 8P
   P-Channel 20-V (D-S) MOSFET
Rev. A, 21-Mar-05
SIS407DN-T1-GE3 VISHAY-SIS407DN-T1-GE3 Datasheet
548Kb / 13P
   P-Channel 20 V (D-S) MOSFET
Rev. B, 06-Sep-10
SI4477DY-T1-GE3 VISHAY-SI4477DY-T1-GE3 Datasheet
261Kb / 10P
   P-Channel 20-V (D-S) MOSFET
Rev. A, 18-May-09
SIA431DJ VISHAY-SIA431DJ Datasheet
221Kb / 9P
   P-Channel 20-V (D-S) MOSFET
Rev. B, 21-May-12
SI1077X VISHAY-SI1077X Datasheet
183Kb / 8P
   P-Channel 20 V (D-S) MOSFET
Rev. A, 24-Dec-12
SI5457DC VISHAY-SI5457DC Datasheet
244Kb / 11P
   P-Channel 20 V (D-S) MOSFET
Rev. A, 06-Sep-10
logo
Analog Power
AM4421P ANALOGPOWER-AM4421P Datasheet
423Kb / 5P
   P-Channel 20-V (D-S) MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com