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SI4922BDY-T1-E3 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SI4922BDY-T1-E3 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 74459 S09-0704-Rev. B, 27-Apr-09 www.vishay.com 3 Vishay Siliconix Si4922BDY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 3 V 2 V 0 8 16 24 32 40 ID - Drain Current (A) 0.010 0.014 0.018 0.022 0.026 0.030 VGS = 2.5 V VGS = 10 V VGS = 4.5 V 0 2 4 6 8 10 09 18 27 36 45 Qg - Total Gate Charge (nC) ID = 5 A VDS = 15 V VDS = 20 V VDS = 10 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature VGS - Gate-to-Source Voltage (V) 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.6 1.2 1.8 2.4 3.0 TJ = 25 °C TJ = - 55 °C TJ = 125 °C Crss VDS - Drain-to-Source Voltage (V) 0 600 1200 1800 2400 3000 06 12 18 24 30 Coss Ciss TJ - Junction Temperature (°C) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 ID = 5 A VGS = 10 V VGS = 4.5 V |
유사한 부품 번호 - SI4922BDY-T1-E3 |
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유사한 설명 - SI4922BDY-T1-E3 |
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