FDD850N10L datasheet(2/8 Pages) FAIRCHILD

부품명	FDD850N10L

상세설명	N-Channel PowerTrench MOSFET 100 V, 15.7 A, 75 m Ohm

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제조업체	FAIRCHILD [Fairchild Semiconductor]

홈페이지	http://www.fairchildsemi.com

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FDD850N10L Rev. C0

Package Marking and Ordering Information

Electrical Characteristics T

C = 25

oC unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDD850N10L

D-PAK

380mm

16mm

2500

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain to Source Breakdown Voltage

ID = 250μA, VGS = 0V

100

-

V

ΔBV

DSS

ΔT

J

Breakdown Voltage Temperature

Coefficient

ID = 250μA, Referenced to 25

oC-

0.1

-

V/oC

IDSS

Zero Gate Voltage Drain Current

VDS = 80V, VGS = 0V

-

1

μA

VDS = 80V, TC = 150

oC

-

500

IGSS

Gate to Body Leakage Current

VGS = ±20V, VDS = 0V

-

±100

nA

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 250μA1.0

-

2.5

V

RDS(on)

Static Drain to Source On Resistance

VGS = 10V, ID = 12A

-

61

75

m

Ω

VGS = 5V, ID = 12A

-

64

96

m

Ω

gFS

Forward Transconductance

VDS = 10V, ID = 15.7A

-31

-

S

Ciss

Input Capacitance

VDS = 25V, VGS = 0V

f = 1MHz

-

1100

1465

pF

Coss

Output Capacitance

-

80

105

pF

Crss

Reverse Transfer Capacitance

-

42

-

pF

Qg(tot)

Total Gate Charge at 10V

VGS = 10V

VDS = 80V

ID = 15.7A

-

22.2

28.9

nC

Qg(tot)

Total Gate Charge at 5V

VGS = 5V

-

12.3

16.0

nC

Qgs

Gate to Source Gate Charge

-3.0

-

nC

Qgd

Gate to Drain “Miller” Charge

-

5.7

-

nC

td(on)

Turn-On Delay Time

VDD = 50V, ID = 15.7A

VGS = 5V, RGEN = 4.7Ω

(Note 4)

-17

44

ns

tr

Turn-On Rise Time

-

21

52

ns

td(off)

Turn-Off Delay Time

-

27

64

ns

tf

Turn-Off Fall Time

-

8

26

ns

ESR

Equivalent Series Resistance (G-S)

-

1.75

-

Ω

IS

Maximum Continuous Drain to Source Diode Forward Current

-

15.7

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

63

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 12A

-

1.3

V

trr

Reverse Recovery Time

VGS = 0V, VDS = 80V, ISD = 15.7A

dIF/dt = 100A/μs

-38

-

ns

Qrr

Reverse Recovery Charge

-

50

-

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1mH, IAS = 9.1A, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 15.7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

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