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HUF76105DK8 데이터시트(PDF) 2 Page - Fairchild Semiconductor

부품명 HUF76105DK8
상세설명  5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HUF76105DK8 데이터시트(HTML) 2 Page - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
HUF76105DK8 Rev. B1
Absolute Maximum Ratings
TA = 25
oC, Unless Otherwise Specified
HUF76105DK8
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
30
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Drain Current
Continuous (TA= 25
oC, V
GS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TA= 100
oC, V
GS = 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TA= 100
oC, V
GS = 4.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
5
1.4
1.3
Figure 4
A
A
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Figures 6, 17, 18
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5
0.02
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
2. 50oC/W measured using FR-4 board at 1 second.
3. 228oC/W measured using FR-4 board with 0.006 in2 of copper at 1000 seconds.
Electrical Specifications
TA = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 12)
30
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 25V, VGS = 0V
-
-
1
µA
VDS = 25V, VGS = 0V, TC = 150
oC-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 11)
1
-
3
V
Drain to Source On Resistance
rDS(ON)
ID = 5A, VGS = 10V (Figures 9, 10)
-
0.040
0.050
ID = 1.4A, VGS = 5V (Figure 9)
-
0.055
0.072
ID = 1.3A, VGS = 4.5V (Figure 9)
-
0.060
0.078
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Ambient
RθJA
Pad Area = 0.76 in2 (Note 2)
-
-
50
oC/W
Pad Area = 0.027 in2 (See TB377)
-
-
191
oC/W
Pad Area = 0.006 in2 (See TB377)
-
-
228
oC/W
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
VDD = 15V, ID ≅ 1.3A,
RL = 11.5Ω, VGS = 4.5V,
RGS = 27Ω
(Figure 15)
--
60
ns
Turn-On Delay Time
td(ON)
-12
-
ns
Rise Time
tr
-28
-
ns
Turn-Off Delay Time
td(OFF)
-31
-
ns
Fall Time
tf
-21
-
ns
Turn-Off Time
tOFF
--
80
ns
HUF76105DK8


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