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HUF76105DK8 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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2 / 12 page ©2003 Fairchild Semiconductor Corporation HUF76105DK8 Rev. B1 Absolute Maximum Ratings TA = 25 oC, Unless Otherwise Specified HUF76105DK8 UNITS Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS 30 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 30 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Drain Current Continuous (TA= 25 oC, V GS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA= 100 oC, V GS = 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA= 100 oC, V GS = 4.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 5 1.4 1.3 Figure 4 A A A Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Figures 6, 17, 18 Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 0.02 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. 2. 50oC/W measured using FR-4 board at 1 second. 3. 228oC/W measured using FR-4 board with 0.006 in2 of copper at 1000 seconds. Electrical Specifications TA = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 30 - - V Zero Gate Voltage Drain Current IDSS VDS = 25V, VGS = 0V - - 1 µA VDS = 25V, VGS = 0V, TC = 150 oC- - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 5A, VGS = 10V (Figures 9, 10) - 0.040 0.050 Ω ID = 1.4A, VGS = 5V (Figure 9) - 0.055 0.072 Ω ID = 1.3A, VGS = 4.5V (Figure 9) - 0.060 0.078 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient RθJA Pad Area = 0.76 in2 (Note 2) - - 50 oC/W Pad Area = 0.027 in2 (See TB377) - - 191 oC/W Pad Area = 0.006 in2 (See TB377) - - 228 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 15V, ID ≅ 1.3A, RL = 11.5Ω, VGS = 4.5V, RGS = 27Ω (Figure 15) -- 60 ns Turn-On Delay Time td(ON) -12 - ns Rise Time tr -28 - ns Turn-Off Delay Time td(OFF) -31 - ns Fall Time tf -21 - ns Turn-Off Time tOFF -- 80 ns HUF76105DK8 |
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