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SI4542DY-T1-GE3 데이터시트(PDF) 5 Page - Vishay Siliconix |
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SI4542DY-T1-GE3 데이터시트(HTML) 5 Page - Vishay Siliconix |
5 / 10 page Document Number: 70666 S09-0868-Rev. G, 18-May-09 www.vishay.com 5 Vishay Siliconix Si4542DY P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 5 V 4 V 2, 1 V 3 V 0.00 0.02 0.04 0.06 0.08 0.10 0 8 16 24 32 40 ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 0 2 4 6 8 10 0 7 14 21 28 35 Qg - Total Gate Charge (nC) VDS = 15 V ID = 6.1 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 8 16 24 32 40 0 1234 5 VGS - Gate-to-Source Voltage (V) TC = - 55 °C 125 °C 25 °C 0 800 1600 2400 3200 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.50 0.75 1.00 1.25 1.50 1.75 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 6.1 A TJ - Junction Temperature (°C) |
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