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SI2318DS 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI2318DS 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Vishay Siliconix Si2318DS Document Number: 72322 S09-0130-Rev. B, 02-Feb-09 www.vishay.com 1 N-Channel 40-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Stepper Motors • Load Switch Notes: a. Surface mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 40 0.045 at VGS = 10 V 3.9 0.058 at VGS = 4.5 V 3.5 G S D Top View 2 3 TO-236 (SOT-23) 1 *Marking Code Si2318DS( C8)* Ordering Information: Si2318DS-T1-E3 (Lead (Pb)-free) Si2318DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a, b TA = 25 °C ID 3.9 3.0 A TA = 70 °C 3.1 2.4 Pulsed Drain Currentb IDM 16 Continuous Source Current (Diode Conduction)a, b IS 0.8 Power Dissipationa, b TA = 25 °C PD 1.25 0.75 W TA = 70 °C 0.8 0.48 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 75 100 °C/W Steady State 120 166 Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 |
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