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HUFA75652G3 데이터시트(PDF) 7 Page - Fairchild Semiconductor

부품명 HUFA75652G3
상세설명  75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
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HUFA75652G3 데이터시트(HTML) 7 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
HUFA75652G3 Rev. B
PSPICE Electrical Model
.SUBCKT HUFA75652 2 1 3 ;
rev 11 May 1999
CA 12 8 11.0e-9
CB 15 14 11.4e-9
CIN 6 8 6.95e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 117.5
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 5.74e-9
LSOURCE 3 7 4.65e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.80e-3
RGATE 9 20 0.85
RLDRAIN 2 5 10
RLGATE 1 9 57.4
RLSOURCE 3 7 46.5
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 2.50e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*455),2))}
.MODEL DBODYMOD D (IS = 6.55e-12 IKF = 30 RS = 1.69e-3 TRS1 = 1.95e-3 TRS2 = 1.05e-6 CJO = 8.71e-9 TT = 7.81e-8 M = 0.50)
.MODEL DBREAKMOD D (RS = 1.45e- 1TRS1 = 1.02e- 4TRS2 = 1.11e-7)
.MODEL DPLCAPMOD D (CJO = 1.00e- 8IS = 1e-3 0N = 1 M = 0.85)
.MODEL MMEDMOD NMOS (VTO = 2.91 KP = 6.50 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.85)
.MODEL MSTROMOD NMOS (VTO = 3.37 KP = 205 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.56 KP = 0.10 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.5 )
.MODEL RBREAKMOD RES (TC1 = 1.09e- 3TC2 = 1.04e-7)
.MODEL RDRAINMOD RES (TC1 = 1.38e-2 TC2 = 3.75e-5)
.MODEL RSLCMOD RES (TC1 = 1.05e-4 TC2 = 2.13e-7)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -2.92e-3 TC2 = -1.48e-5)
.MODEL RVTEMPMOD RES (TC1 = -3.0e- 3TC2 = 1.21e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.0 VOFF= -3.0)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.0 VOFF= -5.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 0.0)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.0 VOFF= -2.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
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RBREAK
RVTEMP
VBAT
RVTHRES
IT
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S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
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MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
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3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
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21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
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RSLC2
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GATE
RGATE
EVTEMP
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LGATE
RLGATE
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