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L6562D 데이터시트(PDF) 10 Page - STMicroelectronics |
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L6562D 데이터시트(HTML) 10 Page - STMicroelectronics |
10 / 16 page L6562 10/16 the output of the multiplier in the proximity of the line voltage zero-crossings. This offset is reduced as the instantaneous line voltage increases, so that it becomes negligible as the line voltage moves toward the top of the sinusoid. To maximally benefit from the THD optimizer circuit, the high-frequency filter capacitor after the bridge rec- tifier should be minimized, compatibly with EMI filtering needs. A large capacitance, in fact, introduces a conduction dead-angle of the AC input current in itself - even with an ideal energy transfer by the PFC pre- regulator - thus making the action of the optimizer circuit little effective. Figure 23. Typical application circuit (250W, Wide-range mains) Figure 24. Demo board (EVAL6562-80W, Wide-range mains): Electrical schematic NTC 2.5 Ω 8 3 BRIDGE STBR606 R1 1.5 M Ω C1 1 µF 400V R3 22 k Ω C29 22 µF 25V FUSE 5A/250V R4 180 k Ω D8 1N4150 D2 1N5248B R14 100 Ω C5 12 nF R6 68 k Ω T 5 6 L6562 7 21 R7 10 Ω MOS STP12NM50 7 °C/W heat sink 4 R11 750 k Ω C6 100 µF 450V Vo=400V Po=250W - Vac (85V to 265V) R9 0.33 Ω 1W R13 9.53 k Ω + - C4 100 nF C2 10nF D1 STTH5L06 R50 10 k Ω C3 2.2 µF R2 1.5 M Ω R5 180 k Ω R10 0.33 Ω 1W R12 750 k Ω C23 680 nF Boost Inductor Spec: EB0057-C (COILCRAFT) D3 1N5406 NTC 2.5 Ω 8 3 BRIDGE DF06M R1 750 k Ω C1 0.47 µF 400V R3 10 k Ω C29 22 µF 25V FUSE 4A/250V R4 180 k Ω D8 1N4150 D2 1N5248B R14 100 Ω C5 12 nF R6 68 k Ω T 5 6 L6562 7 21 R7 33 Ω MOS STP8NM50 4 R11 750 k Ω C6 47 µF 450V Vo=400V Po=80W - Vac (85V to 265V) R9 0.82 Ω 0.6 W R13 9.53 k Ω + - C4 100 nF C2 10nF D1 STTH1L06 R50 12 k Ω C3 680 nF R2 750 k Ω R5 180 k Ω R10 0.82 Ω 0.6 W R12 750 k Ω C23 330 nF Boost Inductor Spec (ITACOIL E2543/E) E25x13x7 core, 3C85 ferrite 1.5 mm gap for 0.7 mH primary inductance Primary: 105 turns 20x0.1 mm Secondary: 11 turns 0.1 mm |
유사한 부품 번호 - L6562D |
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유사한 설명 - L6562D |
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