전자부품 데이터시트 검색엔진 |
|
IRFP244B 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
|
IRFP244B 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page Rev. B, November 2001 ©2001 Fairchild Semiconductor Corporation 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μ s Pulse Test 25℃ V SD, Source-Drain voltage [V] 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 12 V DS = 125V V DS = 50V V DS = 200V ※ Note : I D = 14 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 C oss C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C iss V DS, Drain-Source Voltage [V] 0 10 20304050 0.0 0.3 0.6 0.9 1.2 1.5 V GS = 20V V GS = 10V ※ Note : T J = 25 ℃ I D, Drain Current [A] 24 68 10 10 -1 10 0 10 1 150 oC 25 o C -55 o C ※ Notes : 1. V DS = 40V 2. 250μ s Pulse Test V GS, Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom: 5.0 V ※ Notes : 1. 250μ s Pulse Test 2. T C = 25 ℃ V DS, Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
유사한 부품 번호 - IRFP244B |
|
유사한 설명 - IRFP244B |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |