전자부품 데이터시트 검색엔진 |
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IRFP244B 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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IRFP244B 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2001 Fairchild Semiconductor Corporation November 2001 Rev. B, November 2001 IRFP244B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies. Features • 16A, 250V, RDS(on) = 0.28Ω @VGS = 10 V • Low gate charge ( typical 47 nC) • Low Crss ( typical 30 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter IRFP244B Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 16 A - Continuous (TC = 100°C) 10.1 A IDM Drain Current - Pulsed (Note 1) 64 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 480 mJ IAR Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 18 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 180 W - Derate above 25°C 1.45 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.69 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G TO-3P IRFP Series GS D |
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