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IRFP350A 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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IRFP350A 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page IRFP350A 400 -- 2.0 -- -- -- -- -- 0.46 -- -- -- -- -- 305 134 20 22 100 32 101 14 51.5 -- -- 4.0 100 -100 10 100 0.3 -- 2780 350 155 50 55 210 75 131 -- -- 11.65 2140 -- -- -- 385 4.85 17 68 1.5 -- -- Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=7mH, I AS=17A, VDD=50V, RG=27Ω, Starting TJ =25°C (3) I SD ≤ 17A, di/dt ≤ 250A/µs, VDD ≤ BVDSS , Starting TJ =25°C (4) Pulse Test: Pulse Width = 250 µs, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature 1&+$11(/ 32:(5 026)(7 Electrical Characteristics (T C=25°C unless otherwise specified) Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Characteristic Symbol Max. Units Typ. Min. Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd BVDSS ∆BV/∆T J VGS(th) RDS(on) IGSS IDSS V V/ °C V nA µA Ω pF ns nC -- -- -- -- -- -- -- -- -- -- -- -- -- VGS=0V,ID=250µA ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=400V VDS=320V,TC=125°C VGS=10V,ID=8.5A (4) VDS=50V,ID=8.5A (4) VDD=200V,ID=17A, RG=6.2Ω See Fig 13 (4) (5) VDS=320V,VGS=10V, ID=17A See Fig 6 & Fig 12 (4) (5) Drain-to-Source Leakage Current VGS=0V,VDS=25V,f =1MHz See Fig 5 Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulsed-Source Current (1) Diode Forward Voltage (4) Reverse Recovery Time Reverse Recovery Charge IS ISM VSD trr Qrr Characteristic Symbol Max. Units Typ. Min. Test Condition -- -- -- -- -- A V ns µC Integral reverse pn-diode in the MOSFET TJ=25°C,IS=17A,VGS=0V TJ=25°C,IF=17A diF/dt=100A/µs (4) |
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