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IRFP460C 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
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IRFP460C 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page Rev. A, February 2002 ©2002 Fairchild Semiconductor Corporation Dimensions in Millimeters 25 50 75 100 125 150 0 5 10 15 20 25 T C , Case Temperature [℃] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Figure 7. Breakdown Voltage Variation vs Temperature Figure 11. Transient Thermal Response Curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ※ No te s : 1 . Z θ JC (t) = 0 .5 3 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T JM - T C = P DM * Z θ JC (t ) s i ngl e p u ls e D= 0 . 5 0. 02 0. 2 0. 05 0. 1 0. 01 t 1 , S qua r e W a v e P u ls e D u r a t ion [ s ec ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 µs DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 oC 3. Single Pulse V DS , Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 20.0 A T J, Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※Notes: 1. V GS =0 V 2. I D = 250 μ A T J, Junction Temperature [ o C] P DM t 1 t 2 P DM t 1 t 2 t 1 t 2 Figure 8. On-Resistance Variation vs Temperature |
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