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Adavanced Process Technology

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Ultra Low On-Resistance

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Dual N-Channel MOSFET

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Surface Mount

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Available in Tape & Reel

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Dynamic dv/dt Rating

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Fast Switching

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Lead-Free

Description

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

dual-die capability making it ideal in a variety of power

applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

IRF7103IPbF

D1

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

02/09/10

Absolute Maximum Ratings

Thermal Resistance Ratings

SO-8

www.irf.com

1

Parameter

Max.

Units

3.0

2.3

Pulsed Drain Current 

10

Power Dissipation

2.0

Linear Derating Factor

0.016

W/°C

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery dv/dt ‚

4.5

V/nS

Junction and Storage Temperature Range

-55 to + 150

A

W

°C

Parameter

Min.

Typ.

Max.

Units

Maximum Junction-to-Ambient

„

–––

–––

62.5

°C/W

PD -96085A