TP0202K-T1-GE3 datasheet(2/8 Pages) VISHAY

부품명	TP0202K-T1-GE3

상세설명	P-Channel 30-V (D-S) MOSFET

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제조업체	VISHAY [Vishay Siliconix]

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Document Number: 71609

S-83053-Rev. E, 29-Dec-08

Vishay Siliconix

TP0202K

Notes:

a. Pulse test: PW

≤ 300 µs duty cycle ≤ 2 %.

b. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Limits

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 100 µA

- 30

- 38

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1.3

- 2

- 3.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 5 V

± 50

nA

VDS = 0 V, VGS = ± 10 V

± 300

Zero Gate Voltage Drain Current

IDSS

VDS = - 30 V, VGS = 0 V

- 100

VDS = - 30 V, VGS = 0 V, TJ = 85 °C

- 10

µA

On-State Drain Currenta

ID(on)

VGS = - 10 V, VDS = - 10 V

- 500

mA

Drain-Source On-Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 50 mA

2.1

3.5

Ω

VGS = - 10 V, ID = - 500 mA

1.25

1.4

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 200 mA

315

mS

Diode Forward Voltagea

VSD

IS = - 250 mA, VGS = 0 V

- 1.2

V

Dynamic

Total Gate Charge

Qg

VDS = - 16 V, VGS = - 10 V

ID ≅ - 200 mA

1000

pC

Gate-Source Charge

Qgs

225

Gate-Drain Charge

Qgd

175

Input Capacitance

Ciss

VDS = - 15 V, VGS = 0 V

f = 1 MHz

31

pF

Output Capacitance

Coss

11

Reverse Transfer Capacitance

Crss

4

Switchingb

Turn-On Time

td(on)

VDD = - 15 V, RL = 75 Ω

ID ≅ - 200 mA, VGEN = - 10 V, RG = 6 Ω

9

ns

tr

6

Turn-Off Time

td(off)

30

tf

20

유사한 부품 번호 - TP0202K-T1-GE3

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	TP0202K-T1-GE3	202Kb / 4P	P-Channel 30-V (D-S) MOSFET Rev. B, 02-Jan-06
VBsemi Electronics Co.,...	TP0202K-T1-GE3	1Mb / 7P	P-Channel 60 V (D-S) MOSFET

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유사한 설명 - TP0202K-T1-GE3

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TP0202K-T1-GE3 데이터시트(PDF) 2 Page - Vishay Siliconix

TP0202K-T1-GE3 데이터시트(HTML) 2 Page - Vishay Siliconix

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