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KA5S12656-TU 데이터시트(PDF) 5 Page - Fairchild Semiconductor

부품명 KA5S12656-TU
상세설명  Fairchild Power Switch(FPS)
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KA5S12656-TU 데이터시트(HTML) 5 Page - Fairchild Semiconductor

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KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
5
Electrical Characteristics (SFET Part)
(Ta = 25
°C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
KA5S0765C
Drain-source breakdown voltage
BVDSS
VGS=0V, ID=50
µA
650
-
-
V
Zero gate voltage drain current
IDSS
VDS=Max., Rating, VGS=0V
-
-
50
µA
VDS=0.8Max., Rating,
VGS=0V, TC=125
°C
-
-
200
µA
Static drain-source on resistance(1)
RDS(on)
VGS=10V, ID=4.0A
-
1.25
1.6
Forward transconductance(1)
gfs
VDS=15V, ID=4.0A
3.0
-
-
S
Input capacitance
Ciss
VGS=0V, VDS=25V,
f = 1MHz
-
1600
-
pF
Output capacitance
Coss
-
310
-
Reverse transfer capacitance
Crss
-
120
-
Turn on delay time
td(on)
VDD=0.5BVDSS, ID=7.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-25
-
nS
Rise time
tr
-
55
-
Turn off delay time
td(off)
-
80
-
Fall time
tf
-
50
-
Total gate charge
(gate-source+gate-drain)
Qg
VGS=10V, ID=7.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
--
72
nC
Gate-source charge
Qgs
-
9.3
-
Gate-drain (Miller) charge
Qgd
-
29.3
-
KA5S09654QT
Drain-source breakdown voltage
BVDSS
VGS=0V, ID=50
µA
650
-
-
V
Zero gate voltage drain current
IDSS
VDS=Max., Rating, VGS=0V
-
-
200
µA
VDS=0.8Max., Rating,
VGS=0V, TC=125
°C
-
-
300
µA
Static drain-source on resistance(1)
RDS(on)
VGS=10V, ID=4.5A
-
1.1
1.2
Forward transconductance(1)
gfs
VDS=50V, ID=4.5A
3.0
-
-
S
Input capacitance
Ciss
VGS=0V, VDS=25V,
f = 1MHz
-
1300
-
pF
Output capacitance
Coss
-
135
-
Reverse transfer capacitance
Crss
-
25
-
Turn on delay time
td(on)
VDD=0.5BVDSS, ID=9.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-25
-
nS
Rise time
tr
-
75
-
Turn off delay time
td(off)
-
130
-
Fall time
tf
-
70
-
Total gate charge
(gate-source+gate-drain)
Qg
VGS=10V, ID=9.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
45
-
nC
Gate-source charge
Qgs
-
8
-
Gate-drain (Miller) charge
Qgd
-
22
-


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