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KSD1417 데이터시트(PDF) 1 Page - Fairchild Semiconductor

부품명 KSD1417
상세설명  High Power Switching Applications
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
Rev. A, February 2000
NPN Silicon Darlington Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
7
A
ICP
Collector Current (Pulse)
10
A
IB
Base Current
0.7
A
PC
Collector Dissipation (Ta=25°C)
2
W
PC
Collector Dissipation (TC=25°C)
30
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCEO
Collector-Emitter Breakdown Voltage
IC = 50mA, IB = 0
60
V
ICBO
Collector Cut-off Current
VCB = 60V, IE = 0
100
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
3
mA
h FE1
hFE2
DC Current Gain
VCE = 3V, IC = 3A
VCE = 3V, IC = 7A
2K
1K
15K
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 3A, IB = 6mA
IC = 7A, IB = 14mA
0.9
1.2
1.5
2
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 3A, IB = 6mA
1.5
2.5
V
tON
Turn ON Time
VCC = 45V, IC = 4.5A
IB1 = -IB2 = 6mA
RL = 10Ω
0.8
µs
tSTG
Storage Time
3
µs
tF
Fall Time
2.5
µs
KSD1417
High Power Switching Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Complement to KSB1022
1
1.Base
2.Collector
3.Emitter
TO-220F


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