전자부품 데이터시트 검색엔진 |
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KSE5740 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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KSE5740 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 NPN Silicon Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * PW=5ms, Duty Cycle=10% Symbol Parameter Value Units BVCEO(sus) Collector-Emitter Sustaining Voltage : KSE5740 : KSE5741 : KSE5742 300 350 400 V V V VCEV Collector-Emitter Voltage : KSE5740 : KSE5741 : KSE5742 600 700 800 V V V VEBO Emitter-Base Voltage 8 V IC Collector Current (DC) 8 A ICP *Collector Current (Pulse) 16 A IB Base Current (DC) 2.5 A IBP *Base Current (Pulse) 5 A PC Collector Dissipation 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage : KSE5740 : KSE5741 : KSE5742 IC = 50mA, IB=0 300 350 400 V V V ICEV Collector Cut-off Current VCEV=Rate Value, VBE(OFF)=1.5V 1 mA IEBO Emitter Cut-off Current VEB = 8V, IC= 0 75 mA hFE DC Current Gain VCE =5V, IC = 0.5A VCE =5V, IC = 4A 50 200 100 400 VCE(sat) Collector-Emitter Saturation Voltage IC =4A, IB = 0.2A IC =8A, IB= 0.4A 2 3 V V VBE(sat) Base-Emitter Saturation Voltage IC =4A, IB = 0.2A IC =8A, IB = 0.4A 2.5 3.5 V V VF Diode Forward Voltage IF =5A 2.5 V tD Delay Time VCC = 250V, IC(pk) = 6A IB1 = IB2 = 0.25A tP = 25µs Duty Cycle ≤1% 0.04 µs tR Rise Time 0.5 µs tS Storage Time 8 µs tF Fall Time 2 µs tSV Voltage Storage Time IC(pk) = 6A, VCE(pk) = 250V IB1= 0.06A, VBE (off) = 5V 4 µs tC Cross-over Time 2 µs KSE5740/5741/5742 High Voltage Power Switching In Inductive Circuits • High Voltage Power Darlington TR • Small Engine lgnition • Switching Regulators • Inverters • Solenold and Relay Drivers • Motor Control 1.Base 2.Collector 3.Emitter 1 TO-220 |
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