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2N3906TF 데이터시트(PDF) 2 Page - Fairchild Semiconductor

부품명 2N3906TF
상세설명  PNP General Purpose Amplifier
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

2N3906TF 데이터시트(HTML) 2 Page - Fairchild Semiconductor

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© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1
2
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Note:
1. These ratings are based on a maximum junction temperature of 150
°C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Notes:
2. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
3. Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead minimum 6 cm2.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
-40
V
VCBO
Collector-Base Voltage
-40
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current - Continuous
-200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Parameter
Max.
Units
2N3906
MMBT3906(2)
PZT3906(3)
PD
Total Device Dissipation
625
350
1,000
mW
Derate above 25
°C5.0
2.8
8.0
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W


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