전자부품 데이터시트 검색엔진 |
|
IRFP7430PBF 데이터시트(PDF) 2 Page - International Rectifier |
|
IRFP7430PBF 데이터시트(HTML) 2 Page - International Rectifier |
2 / 9 page IRFP7430PbF 2 www.irf.com Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.14mH RG = 50, IAS = 100A, VGS =10V. ISD 100A, di/dt 990A/μs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400μs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90°C. This value determined from sample failure population, starting TJ = 25°C, L= 0.14mH, RG = 50, IAS = 100A, VGS =10V. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.014 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.0 1.3 m 1.2 ––– m VGS(th) Gate Threshold Voltage 2.2 ––– 3.9 V IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 2.1 ––– VGS = 20V VGS = -20V VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 6.0V, ID = 50A g Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1.0mAd VGS = 10V, ID = 100A g VDS = VGS, ID = 250μA Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ EAS (tested) Single Pulse Avalanche Energy Tested Value k IAR Avalanche Current Ãd A EAR Repetitive Avalanche Energy d mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case j ––– 0.41 RCS Case-to-Sink, Flat Greased Surface 0.24 ––– RJA Junction-to-Ambient ––– 40 °C/W A °C 300 722 See Fig. 14, 15, 22a, 22b 366 Max. 404 286 1524 195 1360 -55 to + 175 ± 20 2.4 10lbf x in (1.1Nx m) |
유사한 부품 번호 - IRFP7430PBF |
|
유사한 설명 - IRFP7430PBF |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |