전자부품 데이터시트 검색엔진 |
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SI5315B-C-GM 데이터시트(PDF) 6 Page - Silicon Laboratories |
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SI5315B-C-GM 데이터시트(HTML) 6 Page - Silicon Laboratories |
6 / 54 page Si5315 6 Rev. 1.0 Output Drive Current CKOIO CMOS Driving into CKOVOL for out- put low or CKOVOH for out- put high. CKOUT+ and CKOUT– shorted externally. VDD = 1.71 V 7.5 — — mA VDD = 2.97 V 32 — — mA 2-Level LVCMOS Input Pins Input Voltage Low VIL VDD =1.71V — — 0.5 V VDD =2.25V — — 0.7 V VDD =2.97V — — 0.8 V Input Voltage High VIH VDD =1.89V 1.4 — — V VDD =2.25V 1.8 — — V VDD =3.63V 2.5 — — V Input Low Current IIL —— 50 µA Input High Current IIH —— 50 µA Weak Internal Input Pull-up Resistor RPUP —75 — k Weak Internal Input Pull-down Resistor RPDN —75 — k 3-Level Input Pins Input Voltage Low VILL —— 0.15 x VDD V Input Voltage Mid VIMM 0.45 x VDD — 0.55 x VDD V Input Voltage High VIHH 0.85 x VDD —— V Input Low Current IILL See note 3. –20 — — µA Input Mid Current IIMM See note 3. –2 — 2 µA Input High Current IIHH See note 3. — — 20 µA Table 2. DC Characteristics (Continued) (VDD = 1.8 ±5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 ºC) Parameter Symbol Test Condition Min Typ Max Units Notes: 1. Refers to Si5315A speed grade. 2. Refers to Si5315B speed grade. 3. This is the amount of leakage that the 3L inputs can tolerate from an external driver. See Figure 3 on page 11. |
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