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TC58DVG02A1FT00 데이터시트(PDF) 23 Page - Toshiba Semiconductor |
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TC58DVG02A1FT00 데이터시트(HTML) 23 Page - Toshiba Semiconductor |
23 / 44 page TC58DVG02A1FT00 2003-01-10 23/44 DEVICE OPERATION Read Mode (1) Read mode (1) is set when a “00H” command is issued to the Command register. Refer to Figure 3 below for timing details and the block diagram. Read Mode (2) BY / RY WE CLE RE M N Start-address input 00H CE ALE I/O Cell array Select page N M Figure 3. Read mode (1) operation 527 A data transfer operation from the cell array to the register starts on the rising edge of WE in the fourth cycle (after the address information has been latched). The device will be in Busy state during this transfer period. The CE signal must stay Low after the fourth address input and during Busy state. After the transfer period the device returns to Ready state. Serial data can be output synchronously with the RE clock from the start pointer designated in the address input cycle. Busy BY / RY WE CLE RE M N Start-address input 01H CE ALE I/O Cell array Select page N M Figure 4. Read mode (2) operation 527 The operation of the device after input of the 01H command is the same as that of Read mode (1). If the start pointer is to be set after column address 256, use Read mode (2). However, for a Sequential Read, output of the next page starts from column address 0. Busy 256 |
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