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BZX84C2V4ET1G 데이터시트(PDF) 1 Page - ON Semiconductor

부품명 BZX84C2V4ET1G
상세설명  Zener Voltage Regulators 225 mW SOT??3 Surface Mount
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 8
1
Publication Order Number:
BZX84C2V4ET1/D
BZX84CxxxET1G Series,
SZBZX84CxxxET1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range − 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power − 225 W (8 X 20 ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL  25C
Ppk
225
W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25C
Derated above 25C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
225
1.8
556
mW
mW/C
C/W
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA = 25C
Derated above 25C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
300
2.4
417
mW
mW/C
C/W
Junction and Storage Temperature Range
TJ, Tstg
−65 to
+150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 8
3
Cathode
1
Anode
MARKING DIAGRAM
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
DEVICE MARKING INFORMATION
BZX84CxxxET1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
1
xxx M G
G
BZX84CxxxET3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
xxx
= Device Code
M
= Date Code*
G
= Pb−Free Package
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
SZBZX84CxxxET1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SZBZX84CxxxET3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel


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