2SC5508-T2-A datasheet(1/10 Pages) RENESAS

부품명	2SC5508-T2-A

상세설명	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

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R09DS0055EJ0200 Rev.2.00

Page 1 of 8

Mar 5, 2013

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Preliminary Data Sheet

2SC5508

NPN SILICON RF TRANSISTOR

FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

FEATURES

• Ideal for low-noise, high-gain amplification applications

• NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

• Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz

• fT = 25 GHz technology adopted

• Flat-lead 4-pin thin-type super minimold (M04) package

ORDERING INFORMATION

Part Number

Order Number

Quantity

Package

Supplying Form

2SC5508

2SC5508-A

50 pcs (Non reel)

2SC5508-T2

2SC5508-T2-A

3 kpcs/reel

2SC5508-T2B

2SC5508-T2B-A

15 kpcs/reel

Flat-lead 4-pin

thin-type super

minimold (M04)

(Pb-Free)

• 8 mm wide embossed taping

• Pin 1 (Emitter), Pin 2 (Collector) face

the perforation side of the tape

Remark To order evaluation samples, please contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TC = 25

°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

15

V

Collector to Emitter Voltage

VCEO

3.3

V

Emitter to Base Voltage

VEBO

1.5

V

Collector Current

IC

35

mA

Total Power Dissipation

Ptot

Note

115

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Free air.

THERMAL RESISTANCE

Parameter

Symbol

Ratings

Unit

Junction to Case Resistance

Rth j-c

150

°C /W

Junction to Ambient Resistance

Rth j-a

650

°C /W

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0055EJ0200

Rev.2.00

Mar 5, 2013

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유사한 부품 번호 - 2SC5508-T2-A

제조업체	부품명	데이터시트	상세설명
NEC	2SC5508-T2	106Kb / 16P	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

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