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SMBT3906S 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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SMBT3906S 데이터시트(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page 2012-08-21 1 SMBT3906...MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904...MMBT3904 (NPN) • SMBT3906S/ U: for orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT3906/ MMBT3906 SMBT3906S SMBT3906U s2A s2A s2A 1=B 1=E1 1=E1 2=E 2=B1 2=B1 3=C 3=C2 3=C2 - 4=E2 4=E2 - 5=B2 5=B2 - 6=C1 6=C1 SOT23 SOT363 SC74 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 6 Collector current IC 200 mA Total power dissipation- TS ≤ 71°C, SOT23, MMBT3906 TS ≤ 115°C, SOT363, MMBT3906S TS ≤ 107°C, SC74, MMBT3906U Ptot 330 250 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 |
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