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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF7811WPBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRF7811WPBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 6 page  IRF7811WPbF www.irf.com 2 Parameter Min Typ Max Units Conditions Diode Forward V SD 1.25 V I S = 15A, VGS = 0V Voltage* Reverse Recovery Q rr 45 nC di/dt ~ 700A/µs V DS = 16V, VGS = 0V, IS = 15A Reverse Recovery Q rr(s) 41 nC di/dt = 700A/µs Charge (with Parallel (with 10BQ040) Schottky) V DS = 16V, VGS = 0V, IS = 15A Source-Drain Rating & Characteristics Charge Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board Typ = measured - Q oss
Typical values of RDS(on) measured at V GS = 4.5V, QG, QSW and QOSS measured at V GS = 5.0V, IF = 15A. Parameter Min Typ Max Units Conditions Drain-to-Source BV DSS 30 – – V V GS = 0V, ID = 250µA Breakdown Voltage Static Drain-Source R DS (on) 9.0 12 m Ω V GS = 4.5V, ID = 15A on Resistance Gate Threshold Voltage V GS(th) 1.0 V V DS = VGS,ID = 250µA Drain-Source Leakage I DSS 30 V DS = 24V, VGS = 0 Current* 150 µA V DS = 24V, VGS = 0, Tj = 100°C Gate-Source Leakage I GSS ±100 nA V GS = ±12V Current Total Gate Chg Cont FET Q G 22 33 V GS=5.0V, ID=15A, VDS=16V Total Gate Chg Sync FET Q G 16.3 V GS = 5V, VDS< 100mV Pre-Vth Q GS1 3.5 V DS = 16V, ID = 15A, VGS = 5.0V Gate-Source Charge Post-Vth Q GS2 1.2 nC Gate-Source Charge Gate to Drain Charge Q GD 8.8 Switch Chg(Q gs2 + Qgd) Q sw 10.1 Output Charge Q oss 12 V DS = 16V, VGS = 0 Gate Resistance R G 2.0 4.0 Ω Turn-on Delay Time t d (on) 11 V DD = 16V, ID = 15A Rise Time t r 11 ns V GS = 5.0V Turn-off Delay Time t d (off) 29 Clamped Inductive Load Fall Time t f 9.9 Input Capacitance C iss – 2335 – Output Capacitance C oss – 400 – pF V DS = 16V, VGS = 0 Reverse Transfer Capacitance C rss – 119 – Electrical Characteristics Current |
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