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MC79L15ABPRP 데이터시트(PDF) 2 Page - ON Semiconductor |
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2 / 11 page MC79L00A Series http://onsemi.com 2 MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.) Rating Symbol Value Unit Input Voltage (−5 V) (−12, −15, −18 V) (−24 V) VI −30 −35 −40 Vdc Power Dissipation Case 29 (TO−92 Type) TA = 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Case 751 (SOIC−8 Type) (Note 1) TA = 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case PD RqJA RqJC PD RqJA RqJC Internally Limited 160 83 Internally Limited 180 45 W °C/W °C/W W °C/W °C/W Storage Temperature Range Tstg −65 to +150 °C Junction Temperature TJ +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. SOIC−8 Junction−to−Ambient Thermal Resistance is for minimum recommended pad size. Refer to Figure 9 for Thermal Resistance variation versus pad size. *This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL_STD_883, Method 3015 Machine Model Method 200 V. ELECTRICAL CHARACTERISTICS (VI = −10 V, IO = 40 mA, CI = 0.33 mF, CO = 0.1 mF, −40°C < TJ +125°C (for MC79LXXAB), 0°C < TJ < +125°C (for MC79LXXAC)). MC79L05AC, AB Characteristics Symbol Min Typ Max Unit Output Voltage (TJ = +25°C) VO −4.8 −5.0 −5.2 Vdc Input Regulation (TJ = +25°C) −7.0 Vdc ≥ VI ≥ −20 Vdc −8.0 Vdc ≥ VI ≥ −20 Vdc Regline − − − − 150 100 mV Load Regulation TJ = +25°C, 1.0 mA ≤ IO ≤ 100 mA 1.0 mA ≤ IO ≤ 40 mA Regload − − − − 60 30 mV Output Voltage −7.0 Vdc ≥ VI ≥ −20 Vdc, 1.0 mA ≤ IO ≤ 40 mA VI = −10 Vdc, 1.0 mA ≤ IO ≤ 70 mA VO −4.75 −4.75 − − −5.25 −5.25 Vdc Input Bias Current (TJ = +25°C) (TJ = +125°C) IIB − − − − 6.0 5.5 mA Input Bias Current Change −8.0 Vdc ≥ VI ≥ −20 Vdc 1.0 mA ≤ IO ≤ 40 mA IIB − − − − 1.5 0.1 mA Output Noise Voltage (TA = +25°C, 10 Hz ≤ f ≤ 100 kHz) Vn − 40 − mV Ripple Rejection (−8.0 ≥ VI ≥ −18 Vdc, f = 120 Hz, TJ = +25°C) RR 41 49 − dB Dropout Voltage (IO = 40 mA, TJ = +25°C) |VI−VO| − 1.7 − Vdc |
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