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4N32M 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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4N32M 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.3 2 Absolute Maximum Ratings (T A = 25°C unless otherwise specified.) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units TOTAL DEVICE TSTG Storage Temperature -50 to +150 °C TOPR Operating Temperature -40 to +100 °C TSOL Lead Solder Temperature (Wave) 260 for 10 sec °C PD Total Device Power Dissipation @ TA = 25°C 250 mW Derate above 25°C 3.3 mW/°C EMITTER IF Continuous Forward Current 80 mA VR Reverse Voltage 3 V IF(pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3.0 A PD LED Power Dissipation @ TA = 25°C 150 mW Derate above 25°C 2.0 mW/°C DETECTOR BVCEO Collector-Emitter Breakdown Voltage 30 V BVCBO Collector-Base Breakdown Voltage 30 V BVECO Emitter-Collector Breakdown Voltage 5 V PD Detector Power Dissipation @ TA = 25°C 150 mW Derate above 25°C 2.0 mW/°C IC Continuous Collector Current 150 mA |
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