IRF2807S

IRF2807L

02/14/02

‡

S

D

G

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in any

high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF2807L) is available for low-

profile applications.

Description

Absolute Maximum Ratings

Parameter

Max.

Units

82

‡

58

A

Pulsed Drain Current



280

Power Dissipation

230

W

Linear Derating Factor

1.5

W/°C

Gate-to-Source Voltage

± 20

V

Avalanche Current



43

A

Repetitive Avalanche Energy



23

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.9

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

IRF2807S

TO-262

IRF2807L

www.irf.com

1

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.65

Junction-to-Ambient (PCB mount)**

–––

40

Thermal Resistance

°C/W

PD - 94170