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LM2662 데이터시트(PDF) 2 Page - Texas Instruments |
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LM2662 데이터시트(HTML) 2 Page - Texas Instruments |
2 / 19 page LM2662, LM2663 SNVS002D – JANUARY 1999 – REVISED MAY 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) Supply Voltage (V+ to GND, or GND to OUT) 6V LV (OUT − 0.3V) to (GND + 3V) FC, OSC, SD The least negative of (OUT − 0.3V) or (V+ − 6V) to (V+ + 0.3V) V+ and OUT Continuous Output Current 250 mA Output Short-Circuit Duration to GND(3) 1 sec. Power Dissipation (TA = 25°C) (4) 735 mW TJ Max (4) 150°C θJA (4) 170°C/W Operating Ambient Temperature Range −40°C to +85°C Operating Junction Temperature Range −40°C to +105°C Storage Temperature Range −65°C to +150°C Lead Temperature (Soldering, 10 seconds) 300°C ESD Rating 2 kV (1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device beyond its rated operating conditions. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. (3) OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and should be avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or device may be damaged. (4) The maximum allowable power dissipation is calculated by using PDMax = (TJMax − TA)/θJA, where TJMax is the maximum junction temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance of the specified package. 2 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM2662 LM2663 |
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