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SI7117DN-T1-GE3 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI7117DN-T1-GE3 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 73478 S11-0648-Rev. C, 11-Apr-11 Vishay Siliconix Si7117DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 81 °C/W. Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t 10 s RthJA 31 39 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 810 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 150 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA 145 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ 6.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.5 - 4.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - 100 ns Zero Gate Voltage Drain Current IDSS VDS = - 150 V, VGS = 0 V - 1 µA VDS = - 150 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS 15 V, VGS = - 10 V - 1.6 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 0.5 A 11.2 VGS = - 6 V, ID = - 0.5 A 1.05 1.3 Forward Transconductancea gfs VDS = - 15 V, ID = - 0.5 A 2.2 S Dynamicb Input Capacitance Ciss VDS = - 25 V, VGS = 0 V, f = 1 MHz 340 510 pF Output Capacitance Coss 30 Reverse Transfer Capacitance Crss 16 Total Gate Charge Qg VDS = - 75 V, VGS = - 10 V, ID = - 0.5 A 7.7 12 nC Gate-Source Charge Qgs 1.5 Gate-Drain Charge Qgd 2.5 Gate Resistance Rg f = 1 MHz 9 Turn-On Delay Time td(on) VDD = - 75 V, RL = 7.5 ID - 1 A, VGEN = - 10 V, Rg = 6 711 ns Rise Time tr 11 17 Turn-Off Delay Time td(off) 16 25 Fall Time tf 11 17 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 12 A Pulse Diode Forward Current ISM - 12 Body Diode Voltage VSD IS = - 1 A, VGS = 0 V - 0.7 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 0.5 A, dI/dt = 100 A/µs, TJ = 25 °C 42 65 ns Body Diode Reverse Recovery Charge Qrr 90 135 nC Reverse Recovery Fall Time ta 35 ns Reverse Recovery Rise Time tb 7 |
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