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SI7117DN-T1-GE3 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI7117DN-T1-GE3
상세설명  P-Channel 150 V (D-S) MOSFET
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제조업체  VISHAY [Vishay Siliconix]
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Document Number: 73478
S11-0648-Rev. C, 11-Apr-11
Vishay Siliconix
Si7117DN
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 81 °C/W.
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, b
t
 10 s
RthJA
31
39
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
810
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 150
V
VDS Temperature Coefficient
VDS/TJ
ID = - 250 µA
145
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
6.7
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.5
- 4.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
- 100
ns
Zero Gate Voltage Drain Current
IDSS
VDS = - 150 V, VGS = 0 V
- 1
µA
VDS = - 150 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS 15 V, VGS = - 10 V
- 1.6
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 0.5 A
11.2
VGS = - 6 V, ID = - 0.5 A
1.05
1.3
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 0.5 A
2.2
S
Dynamicb
Input Capacitance
Ciss
VDS = - 25 V, VGS = 0 V, f = 1 MHz
340
510
pF
Output Capacitance
Coss
30
Reverse Transfer Capacitance
Crss
16
Total Gate Charge
Qg
VDS = - 75 V, VGS = - 10 V, ID = - 0.5 A
7.7
12
nC
Gate-Source Charge
Qgs
1.5
Gate-Drain Charge
Qgd
2.5
Gate Resistance
Rg
f = 1 MHz
9
Turn-On Delay Time
td(on)
VDD = - 75 V, RL = 7.5 
ID  - 1 A, VGEN = - 10 V, Rg = 6 
711
ns
Rise Time
tr
11
17
Turn-Off Delay Time
td(off)
16
25
Fall Time
tf
11
17
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
IS
TC = 25 °C
- 12
A
Pulse Diode Forward Current
ISM
- 12
Body Diode Voltage
VSD
IS = - 1 A, VGS = 0 V
- 0.7
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 0.5 A, dI/dt = 100 A/µs, TJ = 25 °C
42
65
ns
Body Diode Reverse Recovery Charge
Qrr
90
135
nC
Reverse Recovery Fall Time
ta
35
ns
Reverse Recovery Rise Time
tb
7


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