April 2001

SI3948DV

General Description

Features

Absolute Maximum Ratings

T

Symbol

Parameter

Ratings

Units

V

DSS

Drain-Source Voltage

30

V

V

GSS

Gate-Source Voltage - Continuous

±20

V

I

D

Drain Current - Continuous

2.5

A

- Pulsed

10

P

D

Maximum Power Dissipation

(Note 1a)

0.96

W

(Note 1b)

0.9

(Note 1c)

0.7

T

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

130

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

60

°C/W

SI3948DV Rev.A

These N-Channel

Logic

Level

MOSFETs are

produced using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance.

These devices are well suited for all applications where

small size is desireable but especially low cost DC/DC

conversion in battery powered systems.

2.5 A, 30 V. R

@ V

R

@ V

Very fast switching.

Low gate charge (2.1nC typical).

SuperSOT

standard SO-8); low profile (1mm thick).

SOIC-16

SOT-23

SuperSOT

SO-8

SOT-223

SuperSOT

D1

S2

G1

D2

S1

G2

SuperSOT -6

TM

pin 1

.561

1

5

3

2

6

4

© 2001 Fairchild Semiconductor Corporation